HB56UW1673E-F

HB56UW1673E-F Description The HB 56UW 1673E belongs to 8-byte DI MM (D ual in-line Memory Module) fa mily , and have bee n developed an optimized main memory solution for 4 and 8-byte processor applications. The HB56UW1673E is a 16 M × 72 Dyna mic R AM Module, mounted 18 piec es of 64-Mbit DR AM (H M5165405) sea led in TS OP pac kage and 2 piec es of 16-bit line drive r sea led in TS SOP pac kage . The HB 56UW 1673E off ers Extende d Da ta Out (ED O) P age Mode as a high spee d ac ce ss mode. An outline of the HB 56UW 1673E is 168-pin socke t type pac kage (dua l lea d out). The ref ore, the HB 56UW 1673E make s high density mounting possible without surface mount technology. The HB56UW1673E provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the its module board. Features www.DataSheet4U.com 168-pin socket type package (Dual lead out)  Lead pitch : 1.27 mm Single 3.3 V supply : 3.3 ± 0.3 V High speed  Access time: tRAC = 50 ns/60 ns (max)  Access time: tCAC = 18 ns/20 ns (max) Low power dissipation  Active mode: 8.46 W/7.16 W (max)  Standby mode (TTL): 166 mW (max) Buffered input except RAS and DQ 4 byte interleave enabled, dual address input (A0/B0) Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. EO 128MB Buffered EDO DRAM DIMM 16-Mword × 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M × 4 components) E0101H10 (1st edition) (Previous ADE-203-1123A (Z)) Jan. 31, 2001...