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AS3SSD8GB8PBG Dataheets PDF



Part Number AS3SSD8GB8PBG
Manufacturers Austin Semiconductor
Logo Austin Semiconductor
Description Solid State Disk On Chip
Datasheet AS3SSD8GB8PBG DatasheetAS3SSD8GB8PBG Datasheet (PDF)

AUSTIN SEMICONDUCTOR, INC. SOLID ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG PRELIMINARY Austin Semiconductor, Inc. Solid State Disk On Chip (SSDoC) FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported - PIO Mode 4 supported - MWDMA Mode 2 supported • Performance - Sustained Sequential Read Bandwidth:16 MB/s - Sustained Sequential Write Bandwidth: 5 MB/s • Form Factor - BGA Package • 31 mm (W) x 31 mm (L) x 4.2-7.8 mm (H) • Weighs.

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AUSTIN SEMICONDUCTOR, INC. SOLID ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG PRELIMINARY Austin Semiconductor, Inc. Solid State Disk On Chip (SSDoC) FEATURES • Capacities - 4 GB - 8 GB - 16 GB • PATA Compatibility - ATA-5 compatible - UDMA4 supported - PIO Mode 4 supported - MWDMA Mode 2 supported • Performance - Sustained Sequential Read Bandwidth:16 MB/s - Sustained Sequential Write Bandwidth: 5 MB/s • Form Factor - BGA Package • 31 mm (W) x 31 mm (L) x 4.2-7.8 mm (H) • Weighs approximately 11 grams (TYP) • Each NAND component, either a 4, 8 or 16Gb device, based on the use of single and stacked silicon solutions • ECC correction = 6 Bytes within a 512 Byte sector www.DataSheet4U.com • Automatic sleep mode • Controller contained in base interposer • SLC (Single-Level Cell) NAND Flash • Reliability - Mean Time Between Failure (MTBF) >2,000,000 Hours (est.) - Program/Erase >1,000,000 Times (est.) - Temp Cycle 500/1000 cycles, JEDEC A104 Condition B -55ºC to +125ºC • Power Supply Voltage: 5.0V or 3.3 V ± 10% (TYP) • Power Consumption (Vcc = 5.0 V) - Idle: 10 mW (TYP) - Active: 255 mW (TYP) • Operating Temperature - Commercial: 0C to 70C - Industrial: -45C to 85C • Shock and Vibration - Shock: 1500G MIL-STD0810F - Vibration: 15 G RMS MIL-STD0810F • Compliances - Lead free - RoHS - Sn/Pb Ball Option OVERVIEW The solid state disk is based on a proprietary package stacking technology to create an extremely space conscious, robust Solid State Disk. The SSD is capable of operating in harsh, vibration prone product platforms such embedded computing applications, heavy transportation, ultra portables, handhelds, mobile computing, digital radio, high-speed networking & enterprise applications, as well as, military, aerospace and industrial applications. For more products and information please visit our web site at www.austinsemiconductor.com AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG Rev. 1.3 07/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 AUSTIN SEMICONDUCTOR, INC. SOLID ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG PRELIMINARY Austin Semiconductor, Inc. KEY FEATURES • • • • • • • • • • • • • • NAND FLASH Controller (2) stacks, each containing (2 or 4) NAND components Each NAND component, either a 4,8 or 16Gb device, based on the use of single silicon and stacked silicon solutions Providing a total bit density of either 4,8 or 16GB Controller contained in base interposer Fast ATA host to buffer transfer rates supporting True IDE, PIO/4 mode support 512Byte Sector Buffers Flash Memory power-down logic ECC correction = 6 Bytes within a 512 Byte sector Automatic Sleep Mode Burst Transfer rate, 16.67MB per second Sustained Transfer rate: 6.7MB per second Sophisticated Wear Leveling ARCHITECTURE The PATA controller in the PATA Solid State Drive utilizes a 32-bit RISC architecture which provides for direct connection of one, two or four NAND flash memory devices (2 per channel). An on-chip error correction code (ECC) and cyclic redundancy check (CRC) unit generates the required code bytes facilitating error detection and correction of up to six bytes per 512 byte data sector. On the fly code byte generation for read and write operations minimizes ECC performance impacts. The controller’s www.DataSheet4U.com flash memory interface allows the direct connection of up to 10 chips and support Samsung (NAND) type flash memory. ASI PATA Solid State Drives use single level cell (SLC) Samsung NAND Flash Memory devices. AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG Rev. 1.3 07/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 AUSTIN SEMICONDUCTOR, INC. SOLID ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG PRELIMINARY Austin Semiconductor, Inc. BLOCK DIAGRAM 16 Gb Dual enable NAND 16 Gb Dual enable NAND 16 Gb Dual enable NAND 16 Gb Dual enable NAND Controller 16 Gb Dual enable NAND IDE Interface 16 Gb Dual enable NAND 16 Gb Dual enable NAND 16 Gb Dual enable NAND REGULATORY COMPLIANCE www.DataSheet4U.com Since the PATA SSD is a component (or a set of components depending on the configuration) on the motherboard, system certifications are the responsibility of the OEM or ODM. DEVICE COMPLIANCE Compliance PB Free RoHS Description Components and materials are lead free. Restriction of Hazardous Substance Directive AS3SSD4GB8PBG, AS3SSD8GB8PBG, AS3SSD16GB5PBG Rev. 1.3 07/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 AUSTIN SEMICONDUCTOR, INC. SOLID ST ATE DISK STA AS3SSD4GB8PBG AS3SSD8GB8PBG AS3SSD16GB5PBG PRELIMINARY Austin Semiconductor, Inc. PRODUCT SPECIFICATIONS Capacity and User Addressable Sectors Unformatted 4GB* 8GB* 16GB* User Addressable Sector in LBA mode 7,880,544 15,761,088 31,522,176 Note: Formatting and other functions will use some of the space, thus the listed capacity will no.


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