FLK027XP

FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Source Rating 15 -5 Unit V V W °C °C Tc = 25°C 1.88 -65 to +175 175 Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item www.DataSheet4U.com Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 65mA VDS = 5V, IDS = 5mA IGS = -5µA Min. -1.0 -5 23 Limit Typ. Max. 100 50 -2.0 24 150 -3.5 - Unit mA mS V V dBm Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Volta...