FLK017WF

FLK017WF X, Ku Band Power GaAs FET FEATURES High Output Power: P1dB = 20.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 1.15 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with gate resistance of 3000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) www.DataSheet4U.com Item Symbol IDSS gm Vp VGSO P1dB G1dB ηadd NF Gas Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 40mA VDS = 5V, IDS = 3mA IGS = -3µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz VDS = 3V, IDS = 20mA (Typ.), f = 12 GHz Channel to Case Min. -1.0 -5 19.5 6.0 - Limit Typ. Max. 60 30 -2.0 20.5 7.5 26 2.5 7 65 90 -3...