EIB1415-4P

EIB1415-4P UPDATED 06/14/06 14.40-15.35GHz 4W Internally Matched Power FET FEATURES 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package EIB1415-4P ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 14.40-15.35GHz VDS = 8 V, IDSQ ≈ 1600mA Drain Current at 1dB Compression f = 14.40-15.35GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L VDS = 8 V, IDSQ ≈ 65% IDSS f = 15.35GHz Saturated Drain Current Thermal Resistance 3 Caution! ESD sensitive device. MIN 35.0 6.0 TYP 36.0 7.0 MAX UNITS dBm dB ±0.6 23 1700 -43 -46 2720 -2.0 4.5 3400 -3.5 5.0 o dB % 1900 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 24 mA 2) S.C.L. = Single Carrier Level. Pinch-off Voltage VP www.DataSheet4U.com Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temper...