IXGQ20N120BD1

High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1 VCES IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns BD1 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 40 20 100 ICM = 40 @0.8 VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g TO-3P (IXGQ) G C E (TAB) G = Gate E = Emitter Features z z C = Collector TAB = Collector Mounting torque 1.13/10 Nm/lb.in. 300 6 z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s www.DataSheet4U.com z Weight International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 20N120B 20N120BD1 5.0 25 50 ± 100 TJ=125°C 2.9 2.8 3.4 V µA µA nA V V Advantages z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE z VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2 Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost © 2003 IXYS All rights reserved DS99136(12/03...