IXDA20N120AS

High Voltage IGBT IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE(sat) typ = 2.8 V Short Circuit SOA Capability Square RBSOA C TO-263 AB G E C (TAB) Preliminary Data G E E = Emitter, G = Gate , C (TAB) = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 68 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 68 W, non repetitive TC = 25°C IGBT Maximum Ratings 1200 1200 ±20 ±30 34 21 42 ICM = 35 VCEK < VCES 10 200 -55 ... +150 -55 ... +150 2 V V V V A A A A µs W Features q q q q q q q q NPT IGBT technology high switching speed low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package Advantages q q Space savings High power density Typical Applications °C q www.DataSheet4U.com Tstg °C g q q q q Weight AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 0.8 6.5 V V V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 0.6 mA, VCE = VGE VCE = VCES TJ = 25°C TJ = 125°C 0.8 mA mA ± 500 nA VCE = 0 V, VGE = ± 20 V IC = 20 A, VGE = 15 V 2.8 3.4 V © 2000 IXYS All...