M36P0R8070E0

M36P0R8070E0 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.95 V – VPPF = 9 V for fast program (12 V tolerant) Electronic signature – Manufacturer code: 20h – Device code: 8818 Package – ECOPACK® Synchronous/asynchronous read – Synchronous burst read mode: 108 MHz, 66 MHz – Asynchronous page read mode – Random access: 93 ns ■ FBGA ■ TFBGA107 (ZAC) ■ ■ Flash memory ■ Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WPF for block lock-down – Absolute write protection with VPPF = VSS CFI (common Flash interface) Access time: 70 ns Asynchronous page read – Page size: 4, 8 or 16 words – Subsequent read within page: 20 ns Synchronous burst read/write Low power consumption – Active current: < 25 mA – Standby current: 200 µA – Deep power-down current: 10 µA Low power features – PASR (partial array self refresh) – DPD (deep power-down) mode ■ PSRAM ■ ■ Programming time – 4 µs typical Word program time using www.DataSheet4U.com Buffer Enhanced Factory Program command ■ ■ Memory organization – Multiple bank memory array: 32 Mbit banks – Four EFA (extended flash array) blocks of 64 Kbits Dual operations – Program/erase in one bank while read in others – No d...