STS2620

S T S 2620 S amHop Microelectronics C orp. F eb,25 2005 V er1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 20V P R ODUC T S UMMAR Y (P -C hannel) V DS S -20V ID 2.5A R DS (ON) ( m W ) Max ID -2A R DS (ON) ( m W ) Max 80 @ V G S = 4.5V 110 @ V G S = 2.5V D1 130 @ V G S = -4.5V 190 @ V G S = -2.5V D2 TS OP 6 Top View G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 N-ch G2 S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage www.DataSheet4U.com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG N-C hannel P-C hannel 20 10 2.5 8 1.25 1.0 -55 to 150 -20 10 -2 -7 -1.25 Unit V V A A A W C Drain C urrent-C ontinuous a @ Tc=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 125 C /W 1 S T S 2620 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =2.5A V GS = 2.5V, ID= 2A V DS = 5V, V GS = 4.5V V DS = 5V, ID =2.5A Min Typ C Max Unit 20 1 100 0.5 0.8 65 9...