(MP4TD1135 / MP4TD1136) Silicon Bipolar MMIC Cascadable Amplifier
M-Pulse Microwave
Silicon Bipolar MMIC Cascadable Amplifier
Features • High Dynamic Range Cascadable
50Ω/75Ω Gain Block ...
Description
M-Pulse Microwave
Silicon Bipolar MMIC Cascadable Amplifier
Features High Dynamic Range Cascadable
50Ω/75Ω Gain Block 3dB Bandwidth: 50 MHz to 1.0 GHz 17 dBm Typical P1dB @ 0.7 GHz 11 dB Typical Gain @ 0.5 GHz 4.0 dB Typical Noise Figre @ 0.7 GHz Cost Effective Ceramic Microstrip Package Tape and Reel Packaging Available
MP4TD1135, MP4TD1136
Ceramic Microstrip Case Style Outlines1,2,3
Available in short lead version as MP4TD1136.
4 .085 2,15 RF OUT AND BIAS 3 .020 0,508 GND
RF INPUT 1
Description
M-Pulse's MP4TD1135 and MP4TD1136 are high performance silicon bipolar MMICs housed in cost effective ceramic microstrip packages. The MP4TD1135 and MP4TD1136 are designed for use in 50Ω or 75Ω systems where a high dynamic range gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD1135 and MP4TD1136 are fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
.057 1,45 .455 ±.030 11,54 ±0,76 0.180±0.010 4.57 ±0,25 MA4TD1136 2 GND
.100 2,54 ø .083 2,11 .022 0,56
.006 ±.002 0,15 ±0,05
MA4TD1135
TYPICAL POWER GAIN vs FREQUENCY
14 12 10 GAIN (dB) 8 6 4 Id=60mA
Notes: (unless otherwise specified) 1. Dimensions are in / mm 2. Tolerance: in .xxx = ±.005; mm .xx = ±.13 3. See last page of data sheet for short lead Micro-X
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0 0.1 1 FREQUENCY (GHz) 10
2
Pin Configurati...
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