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MP4TD0635 Dataheets PDF



Part Number MP4TD0635
Manufacturers M-pulse Microwave
Logo M-pulse Microwave
Description (MP4TD0635 / MP4TD0636) Silicon Bipolar MMIC Cascadable Amplifier
Datasheet MP4TD0635 DatasheetMP4TD0635 Datasheet (PDF)

M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 0.8 GHz • 18.5 dB Typical Gain @ 0.5 GHz • Unconditionally Stable (k>1) • 3.5 Voltage Operation • Cost Effective Ceramic Microstrip Package • Tape and Reel Packaging Available Description M-Pulse's MP4TD0635 and MP4TD0636 are high performance silicon bipolar MMICs housed in a cost effective ceramic microstrip packages. The MP4TD0635 and MP4TD0636 are designed for use where a ge.

  MP4TD0635   MP4TD0635


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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 0.8 GHz • 18.5 dB Typical Gain @ 0.5 GHz • Unconditionally Stable (k>1) • 3.5 Voltage Operation • Cost Effective Ceramic Microstrip Package • Tape and Reel Packaging Available Description M-Pulse's MP4TD0635 and MP4TD0636 are high performance silicon bipolar MMICs housed in a cost effective ceramic microstrip packages. The MP4TD0635 and MP4TD0636 are designed for use where a general purpose 50Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD0635 and MP4TD0636 are fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. MP4TD0635, MP4TD0636 Ceramic Microstrip Case Style Outlines1,2,3 Available in short lead version as MP4TD0636. 4 .085 2,15 RF OUT AND BIAS 3 .020 0,508 GND RF INPUT 1 2 GND .100 2,54 ø .083 2,11 .057 1,45 .455 ±.030 11,54 ±0,76 MA4TD0635 0.180±0.010 MA4TD0636 4,57 ±0,25 .022 0,56 .006 ±.002 0,15 ±0,05 TYPICAL POWER GAIN vs FREQUENCY 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 www.DataSheet4U.com 0 .1 1 F R E Q U E N C Y (G H z) 10 Id= 1 6 m A Notes: (unless otherwise specified) 1. Dimensions are in / mm 2. Tolerance: in .xxx = ±.005; mm .xx = ±.13 3. See last page of data sheet for short lead Micro-X Pin Configuration Pin Number 1 2&4 3 Units dB dB GHz dBm dB dBm ps V mV/°C Pin Description RF Input AC/DC Ground RF Output and DC Bias Min. 19 3.1 Typ. 20.0 ±0.8 0.8 2.0 1.8 4.5 3.0 14.5 200 3.5 -8.0 Max. 22 ±1.0 4.0 3.9 - Electrical Specifications @ TA = +25°C, Id = 16 mA, Z0 = 50Ω Symbol Parameters Test Conditions Gp Power Gain (⏐S21⏐2) f = 0.1 GHz ªGp Gain Flatness f = 0.1 to 0.6 GHz f3dB 3 dB Bandwidth SWRin Input SWR f = 0.1 to 1.5 GHz SWRout Output SWR f = 0.1 to 1.5 GHz P1dB Output Power @ 1 dB Gain Compression f = 0.5 GHz NF f = 0.5 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 0.5 GHz tD Group Delay f = 0.5 GHz Vd Device Voltage dV/dT Device Voltage Temperature Coefficient - Specification Subject to Change Without Notice M-Pulse Microwave PH (408) 432-1480 __________________________________________________________________________________ 1 FX (408) 432-3440 Silicon Bipolar MMIC Cascadable Amplifier Absolute Maximum Ratings1 Parameter Absolute Maximum Device Current 50 mA Power Dissipation2,3 200 mW RF Input Power +20 dBm Junction Temperature 200°C Storage Temperature -65°C to +200°C Thermal Resistance: θjc = 150°C/W 1. Exceeding these limits may cause permanent damage. 2. Case Temperature (Tc) = 25 °C. 3. Derate at 6.7 mW/°C for Tc > 170°C. C (DC Block) IN 1 4 MP4TD0635, MP4TD0636 Typical Bias Configuration Rbias Vcc > 5.5 V Id = Vcc - Vd Rbias RFC (Optional) C (DC Block) 3 MP4TD0635 MP4TD0636 Vd =3.5 V OUT 2 Typical Performance Curves @ Id = 16 mA, TA = +25°C (unless otherwise noted) DEVICE CURRENT vs DEVICE VOLTAGE 25 Id, DEVICE CURRENT (mA) 0 -5 RETURN LOSS (dB) 20 RETURN LOSS vs FREQUENCY Input -1 0 O utput -1 5 -2 0 -2 5 -3 0 15 10 5 www.DataSheet4U.com 0 0 .5 1 0 1 .5 2 2 .5 3 3 .5 4 0 .1 1 F R E Q U E N C Y (G H z) 10 V d, D E V IC E VO L T A G E (V ) POWER GAIN vs CURRENT 25 0 .1 G H z 20 GAIN (dB) 0 .5 G H z POUT - 1dB (dBm) 1 .0 G H z 15 2 .0 G H z 10 8 6 4 2 0 10 15 20 25 30 35 40 12 POUT @ 1dB GAIN COMPRESSION vs FREQUENCY Id= 3 0 m A 10 Id= 2 0 m A Id= 1 6 m A 5 0 Id, D E V IC E C U R R E N T (m A ) 0 .1 1 F R E Q U E N C Y (G H z) 10 Specification Subject to Change Without Notice M-Pulse Microwave PH (408) 432-1480 __________________________________________________________________________________ 2 FX (408) 432-3440 Silicon Bipolar MMIC Cascadable Amplifier NOISE FIGURE vs FREQUENCY 5 4 .5 NOISE FIGURE (dB) Id= 1 2 m A 4 Id= 1 6 m A 3 .5 3 2 .5 2 0 .1 1 F R E Q U E N C Y (G H z) 10 Id= 2 0 m A REVERSE ISOLATION (dB) -1 1 -1 3 -1 5 -1 7 -1 9 -2 1 -2 3 0 .1 MP4TD0635, MP4TD0636 REVERSE ISOLATION vs FREQUENCY 1 F R E Q U E N C Y (G H z) 10 Typical Scattering Parameters Z0 = 50Ω, TA = +25°C, Id = 16 mA Frequency S11 (GHz) Mag. Angle 0.1 0.055 -153.1 0.2 0.068 -148.6 0.3 0.094 -134.8 0.4 0.111 -135.4 0.5 0.134 -133.4 0.6 0.156 -138.3 0.7 0.175 -139.3 0.8 0.200 -140.2 0.9 0.224 -143.2 1.0 0.243 -147.8 1.5 0.334 -164.4 2.0 0.408 177.9 2.5 0.474 163.1 3.0 0.513 150.8 Ordering Information Long Lead Model No. MP4TD0635 www.DataSheet4U.com MP4TD0635T Mico-X Case Styles S21 Mag. 9.47 9.30 8.90 8.57 8.29 7.78 7.41 6.93 6.54 6.09 4.55 3.48 2.79 2.34 Angle 171.0 162.3 154.3 146.3 138.8 131.9 125.1 119.7 114.0 109.0 87.9 73.0 60.9 52.9 Mag. 0.076 0.077 0.080 0.083 0.089 0.096 0.103 0.106 0.109 0.118 0.143 0.163 0.183 0.191 S12 Angle 5.8 8.4 16.3 20.2 24.9 27.3 28.2 30.6 31.2 33.8 36.5 35.7 36.2 38.3 Mag 0.053 0.092 0.131 0.165 0.194 0.215 0.237 0.254 0.266 0.277 0.292 0.278 0.236 0.218 S22 Angle -55.9 -79.0 -101.8 -11.


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