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MP4TD0600

M-pulse Microwave

Silicon Bipolar MMIC Cascadable Amplifier

M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to ...


M-pulse Microwave

MP4TD0600

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Description
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features Cascadable 50Ω Gain Block 3dB Bandwidth: DC to 0.8 GHz 18.5 dB Typical Gain @ 0.5 GHz Unconditionally Stable (k>1) Low Voltage Operation Chip Outline Drawing1,2,3,4 RF Input Optional +15 Volts MP4TD0600 Optional +12 Volts Description M-Pulse's MP4TD0600 is a high performance silicon bipolar MMIC chip. The MP4TD0600 is designed for use where a general purpose 50Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. Optional +5 Volts 375 µ (14.8 mil) The MP4TD0600 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. Ground Optional RF Output & +3.5 Volts 375 µ (14.8 mil) 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 TYPICAL POWER GAIN vs FREQUENCY I d= 16 m A Notes: (unless otherwise specified) 1. Chip Thickness is 120 µ m; 4.8 mils 2. Bond Pads are 40 µ m; 1.6 mils typical in diameter 3. Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4. Tolerance:µ m .xx = ±.13; mil .x = ±.5 0 .1 1 FR E Q U E N C Y (G H z) 10 www.DataSheet4U.com Ordering Information Model No. MP4TD0600G MP4TD0600W Units dB dB GHz dBm dB dBm ps V mV/°C Type of Carrier GEL PACK Waffle Pack Min. 3.1 Typ. 20.0 ±0.7 0.8 2.0 1.8 3.0 3.0 14.5 200 3.5 -8.0 Max. 3.9 - Electrical Specifications @ T A = +25°C, Id = 16 mA...




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