Silicon Bipolar MMIC Cascadable Amplifier
M-Pulse Microwave
Silicon Bipolar MMIC Cascadable Amplifier
Features
• Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to ...
Description
M-Pulse Microwave
Silicon Bipolar MMIC Cascadable Amplifier
Features
Cascadable 50Ω Gain Block 3dB Bandwidth: DC to 0.8 GHz 18.5 dB Typical Gain @ 0.5 GHz Unconditionally Stable (k>1) Low Voltage Operation Chip Outline Drawing1,2,3,4
RF Input Optional +15 Volts
MP4TD0600
Optional +12 Volts
Description
M-Pulse's MP4TD0600 is a high performance silicon bipolar MMIC chip. The MP4TD0600 is designed for use where a general purpose 50Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
Optional +5 Volts 375 µ (14.8 mil)
The MP4TD0600 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
Ground Optional RF Output & +3.5 Volts 375 µ (14.8 mil)
22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0
TYPICAL POWER GAIN vs FREQUENCY
I d= 16 m A
Notes: (unless otherwise specified) 1. Chip Thickness is 120 µ m; 4.8 mils 2. Bond Pads are 40 µ m; 1.6 mils typical in diameter 3. Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4. Tolerance:µ m .xx = ±.13; mil .x = ±.5
0 .1
1 FR E Q U E N C Y (G H z)
10
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Ordering Information Model No. MP4TD0600G MP4TD0600W Units dB dB GHz dBm dB dBm ps V mV/°C
Type of Carrier GEL PACK Waffle Pack Min. 3.1 Typ. 20.0 ±0.7 0.8 2.0 1.8 3.0 3.0 14.5 200 3.5 -8.0 Max. 3.9 -
Electrical Specifications @ T A = +25°C, Id = 16 mA...
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