Document
Low OperatingVoltage, High fT Bipolar Microwave Transistors
Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els Description The MP4T6365 family of low v oltage, high gain bandwidth silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transistors are especially attractiv e for low operating v oltage low noise amplifiers or driv er amplifiers at frequencies to 4 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz. The MP4T6365 family was designed to hav e low noise figure at operating v oltages as low as 3 v olts. These transistors also exhibit low phase noise in VCOs operating at 5 v olts or less. Because this transistor family was specifically designed to perate from low bias v oltage, it has superior phase noise in comparison to similar current bipolar transistors www.DataSheet4U.com with higher collector breakdown v oltage when operating under the same low v oltage conditions. The MP4T6365 series transistors are av ailable in hermetic Micro-X packages, the SOT-23, the SOT-143, and in chip form (MP4T636500). Other stripline and hermetic packages are av ailable. The chip and hermetic packages can be screened to JANTX, JANTXV equiv alent lev els. The plastic parts can be supplied on tape and reel. All of M-Pulse’ s silicon bipolar transistor families use silicon dioxide and silicon nitride passiv ation to assure low 1/F noise for amplifier and oscillator applications.
MP4T6365
V2.00
Case Styles
SOT-23
SOT-143
Chip
Micro-X
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
1
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Maximum Ratings (TA = 25° C) MP4T6365 Series
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Plastic Packages Power Dissipation Package Type Chip (MP4T636500) SOT-23 (MP4T636533) Micro-X Package (MP4T636535) SOT-143 (MP4T636539) Maximum Dissipation @ 25° C 400 mW 200 mW 300 mW 225 mW Maximum Operating Temperature 175° C 125° C 150° C 125° C VCBO VCE VEB IC Tj TS 10 V 6V 1.5 V 65 mA 200° C -65° C to +200° C -65° C to +125° C
MP4T6365 Series
V2.00
Electrical Specifications @ 25° C
MP4T6365 Series
MP4T636500 Parameter of Test Gain Bandwidth Product Insertion Power Gain
www.DataSheet4U.com
MP4T636535 Micro-X 10 typ
MP4T636539 SOT-143 10 typ
MP4T636533 SOT-23 10 typ
Condition VCE = 3 V I C = 20 mA VCE = 3 V I C = 10 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 20 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 20 mA f = 2 GHz f = 4 GHz
Symbol fT |S21E|2
Units GHz dB
Chip 10 typ
14 typ 7.0 min NF dB 1.3 typ 1.6 typ GTU (max) dB 15 typ 10 typ MAG dB 16 typ 12 typ P1dB dBm 16 typ 12 typ
13 typ 7.0 min
13 typ 7.0 min
13 typ 7.0 min
Noise Figure
1.3 typ 1.6 typ
1.4 typ 1.7 typ
1.4 typ 1.7 typ
Unilateral Gain
15 typ 10 typ
14 typ 9 typ
14 typ 9 typ
Maximum Available Gain
16 typ 11 typ
16 typ 10 typ
16 typ 10 typ
Output Power at 1 dB Compression
17 typ 13 typ
16 typ 12 typ
16 typ 12 typ
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
576 Charcot Avemue, San Jose, California 95131
2
Tel (408) 432-1480
Fax (408)) 432-3440
Low Operating Voltage, High fT Bipolar Microwave Transistors
Electrical Specifications @ 25° C
Parameter Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Condition VCB = 3 volts I E = 0 µA VEB = 1 volt I C = 0 µA VCE = 3 volts I C = 5 mA VCB = 5 volts I E = 0 µA f = 1 MHz Symbol I CBO I EBO hFE COB Min 30 Typical 75 0.50
MP4T6365 Series
V2.00
Max 100 1 200 0.70
Units µA µA pF
Typical Common Emitter Scattering Parameters in the MIcro-X Package MP4T636535, VCE = 3 Volts, IC = 5 mA
Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.640 0.580 0.571 0.590 0.597 0.622 0.646 0.676 0.712 0.750 0.793 0.833 Angle -103 -153 -175 168 155 144 134 124 115 106 96 88 Mag. 6.343 3.984 2.813 2.214 1.853 1.632 1.460 1.341 1.241 1.191 1.130 1.081 S21E Angle 116.9 91.5 77.9 67.0 57.9 48.2 40.1 31.7 23.7 16.4 8.4 2.5 Mag. 0.103 0.123 0.135 0.146 0.159 0.174 0.190 0.205 0.218 0.238 0.257 0.272 S12E Angle 38.7 29.0 27.7 26.8 27.3 27.3 26.8 25.6 24.1 22.2 20.2 17.3 Mag 0.534 0.346 0.250 0.242 0.211 0.227 0.229 0.238 0.255 0.277 0.310 0.323 S22E Angle -75.2 -103.0 -124.9 -140.4 -150.2 -164.1 -168..