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MP4T6325 Dataheets PDF



Part Number MP4T6325
Manufacturers M-pulse Microwave
Logo M-pulse Microwave
Description General Purpose Low Noise High fT Silicon Transistor
Datasheet MP4T6325 DatasheetMP4T6325 Datasheet (PDF)

Low OperatingVoltage, High fT Bipolar Microwave Transistors Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els Description The MP4T6365 family of low v oltage, high gain bandwidth silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transistors are especially att.

  MP4T6325   MP4T6325


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Low OperatingVoltage, High fT Bipolar Microwave Transistors Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els Description The MP4T6365 family of low v oltage, high gain bandwidth silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transistors are especially attractiv e for low operating v oltage low noise amplifiers or driv er amplifiers at frequencies to 4 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz. The MP4T6365 family was designed to hav e low noise figure at operating v oltages as low as 3 v olts. These transistors also exhibit low phase noise in VCOs operating at 5 v olts or less. Because this transistor family was specifically designed to perate from low bias v oltage, it has superior phase noise in comparison to similar current bipolar transistors www.DataSheet4U.com with higher collector breakdown v oltage when operating under the same low v oltage conditions. The MP4T6365 series transistors are av ailable in hermetic Micro-X packages, the SOT-23, the SOT-143, and in chip form (MP4T636500). Other stripline and hermetic packages are av ailable. The chip and hermetic packages can be screened to JANTX, JANTXV equiv alent lev els. The plastic parts can be supplied on tape and reel. All of M-Pulse’ s silicon bipolar transistor families use silicon dioxide and silicon nitride passiv ation to assure low 1/F noise for amplifier and oscillator applications. MP4T6365 V2.00 Case Styles SOT-23 SOT-143 Chip Micro-X Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 1 Tel (408) 432-1480 Fax (408)) 432-3440 Low Operating Voltage, High fT Bipolar Microwave Transistors Maximum Ratings (TA = 25° C) MP4T6365 Series Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Plastic Packages Power Dissipation Package Type Chip (MP4T636500) SOT-23 (MP4T636533) Micro-X Package (MP4T636535) SOT-143 (MP4T636539) Maximum Dissipation @ 25° C 400 mW 200 mW 300 mW 225 mW Maximum Operating Temperature 175° C 125° C 150° C 125° C VCBO VCE VEB IC Tj TS 10 V 6V 1.5 V 65 mA 200° C -65° C to +200° C -65° C to +125° C MP4T6365 Series V2.00 Electrical Specifications @ 25° C MP4T6365 Series MP4T636500 Parameter of Test Gain Bandwidth Product Insertion Power Gain www.DataSheet4U.com MP4T636535 Micro-X 10 typ MP4T636539 SOT-143 10 typ MP4T636533 SOT-23 10 typ Condition VCE = 3 V I C = 20 mA VCE = 3 V I C = 10 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 20 mA f = 1 GHz f = 2 GHz VCE = 3 V I C = 20 mA f = 2 GHz f = 4 GHz Symbol fT |S21E|2 Units GHz dB Chip 10 typ 14 typ 7.0 min NF dB 1.3 typ 1.6 typ GTU (max) dB 15 typ 10 typ MAG dB 16 typ 12 typ P1dB dBm 16 typ 12 typ 13 typ 7.0 min 13 typ 7.0 min 13 typ 7.0 min Noise Figure 1.3 typ 1.6 typ 1.4 typ 1.7 typ 1.4 typ 1.7 typ Unilateral Gain 15 typ 10 typ 14 typ 9 typ 14 typ 9 typ Maximum Available Gain 16 typ 11 typ 16 typ 10 typ 16 typ 10 typ Output Power at 1 dB Compression 17 typ 13 typ 16 typ 12 typ 16 typ 12 typ Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 2 Tel (408) 432-1480 Fax (408)) 432-3440 Low Operating Voltage, High fT Bipolar Microwave Transistors Electrical Specifications @ 25° C Parameter Collector Cut-off Current Emitter Cut-off Current Forward Current Gain Collector-Base Junction Capacitance Condition VCB = 3 volts I E = 0 µA VEB = 1 volt I C = 0 µA VCE = 3 volts I C = 5 mA VCB = 5 volts I E = 0 µA f = 1 MHz Symbol I CBO I EBO hFE COB Min   30  Typical   75 0.50 MP4T6365 Series V2.00 Max 100 1 200 0.70 Units µA µA  pF Typical Common Emitter Scattering Parameters in the MIcro-X Package MP4T636535, VCE = 3 Volts, IC = 5 mA Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.640 0.580 0.571 0.590 0.597 0.622 0.646 0.676 0.712 0.750 0.793 0.833 Angle -103 -153 -175 168 155 144 134 124 115 106 96 88 Mag. 6.343 3.984 2.813 2.214 1.853 1.632 1.460 1.341 1.241 1.191 1.130 1.081 S21E Angle 116.9 91.5 77.9 67.0 57.9 48.2 40.1 31.7 23.7 16.4 8.4 2.5 Mag. 0.103 0.123 0.135 0.146 0.159 0.174 0.190 0.205 0.218 0.238 0.257 0.272 S12E Angle 38.7 29.0 27.7 26.8 27.3 27.3 26.8 25.6 24.1 22.2 20.2 17.3 Mag 0.534 0.346 0.250 0.242 0.211 0.227 0.229 0.238 0.255 0.277 0.310 0.323 S22E Angle -75.2 -103.0 -124.9 -140.4 -150.2 -164.1 -168..


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