A1386A

LAPT 2SA1386/1386A Application : Audio and General Purpose (Ta=25°C) 2SA1386 –100max VCB= IEBO V(BR)CEO hFE VCE(sat) fT COB VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz –160 –160min 2SA1386A –100max –180 –100max –180min 50min∗ –2.0max 40typ 500typ V MHz pF 5.45±0.1 B C E 5.45±0.1 1.4 20.0min 4.0max 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Symbol 2SA1386 2SA1386A VCBO VCEO VEBO IC IB PC Tj Tstg –160 –160 –5 –15 –4 130(Tc=25°C) 150 –55 to +150 –180 –180 Unit V V V A A W °C °C Symbol ICBO Conditions External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA V 19.9±0.3 V 4.0 a b ø3.2±0.1 sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IB1 (A) –1 IB2 (A) 1 ton (µs) 0.3typ tstg (µs) 0.7typ tf (µs) 0.2typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 –5 m 00 V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –15 (V C E =–4V) A A –7 00 – 0 40 m m A –3 00 m A Collector Current I C (A) –200mA –10 Collector Current I C (A) –2 –10 –150mA p) –100mA –5 mp) e Te eT Cas –1 –5 (Cas ˚C ( –50mA 25˚C I B =–20mA –...