FGPF50N33BT

FGPF50N33BT — 330 V PDP Trench IGBT FGPF50N33BT 330 V PDP Trench IGBT Features High Current Capability Low Saturation Voltage: VCE(sat) =1.6 V @ IC = 50 A High Input Impedance RoHS Compliant Applications PDP TV November 2013 General Description Using novel trench IGBT technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential. GC E TO-220F Absolute Maximum Ratings Symbol VCES VGES IC ICpulse (1)* ICpulse (2)* PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 25oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D < 0.01, pluse width < 10usec *Ic_pluse limited by max Tj ©2008 Fairchild Semiconductor Corporation FGPF50N33BT Rev. C1 1 Ratings 330  30 50 120 160 43 17.2 -55 to +150 -55 to +150 300 Unit V V A A A W W oC oC oC Typ. - Max. 2.9 62.5 Unit oC/W oC/W www.fairchildsemi.com FGPF50N33BT — 330 V PDP Trench IGBT Package Marking and Ordering Informatio...