5SMX12M3300

VCE IC = = 3300 V 50 A IGBT-Die 5SMX 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1621-02 Sep 05 Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature www.DataSheet4U.com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2500 V, VCEM ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max 3300 50 100 Unit V A A V µs °C -20 20 10 -40 125 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SMX 12M3300 IGBT characteristic values Parameter Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol Conditions VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 1800 V, IC = 50 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load VCC = 1800 V, IC = 50 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load VCC = 1800 V, IC = 50 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load, FWD...