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CY7C1170V18 Dataheets PDF



Part Number CY7C1170V18
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description (CY7C11xxV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture
Datasheet CY7C1170V18 DatasheetCY7C1170V18 Datasheet (PDF)

CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ ■ ■ ■ ■ ■ Functional Description The CY7C1166V18, CY7C1177V18, CY7C1168V18, and CY7C1170V18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II+ architecture. The DDR-II+ consists of an SRAM core with an advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registere.

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CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ ■ ■ ■ ■ ■ Functional Description The CY7C1166V18, CY7C1177V18, CY7C1168V18, and CY7C1170V18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II+ architecture. The DDR-II+ consists of an SRAM core with an advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 8-bit words (CY7C1166V18), or 9-bit words (CY7C1177V18), or 18-bit words (CY7C1168V18), or 36-bit words (CY7C1170V18) that burst sequentially into or out of the device. Asynchronous inputs include output impedance matching input (ZQ). Synchronous data outputs (Q, sharing the same physical pins as the data inputs D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR SRAM in the system design. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) 300 MHz to 400 MHz clock for high bandwidth 2-Word burst for reducing address bus frequency Double Data Rate (DDR) interfaces (data transferred at 800 MHz) @ 400 MHz Read latency of 2.5 clock cycles Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only Echo clocks (CQ and CQ) simplify data capture in high-speed systems Data valid pin (QVLD) to indicate valid data on the output Synchronous internally self-timed writes Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1] ■ ■ ■ ■ ■ HSTL inputs and Variable drive HSTL output buffers ■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm) ■ Offered in both Pb-free and non Pb-free packages ■ ■ JTAG 1149.1-compatible test access port Delay Lock Loop (DLL) for accurate data placement Configurations With Read Cycle Latency of 2.5 cycles: CY7C1166V18 – 2M x 8 www.DataSheet4U.com CY7C1177V18 – 2M x 9 CY7C1168V18 – 1M x 18 CY7C1170V18 – 512K x 36 Selection Guide 400 MHz Maximum Operating Frequency Maximum Operating Current 400 1080 375 MHz 375 1020 333 MHz 333 920 300 MHz 300 850 Unit MHz mA Note 1. The QDR consortium specification for VDDQ is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting VDDQ = 1.4V to VDD. Cypress Semiconductor Corporation Document Number: 001-06620 Rev. *C • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised June 21, 2007 [+] Feedback CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 Logic Block Diagram (CY7C1166V18) A(19:0) 20 Write Add. Decode LD K K DOFF Read Add. Decode Address .


CY7C1168V18 CY7C1170V18 KAS16TW


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