CY7C1166V18

CY7C1166V18 CY7C1177V18 CY7C1168V18 CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ ■ ■ ■ ■ ■ Functional Description The CY7C1166V18, CY7C1177V18, CY7C1168V18, and CY7C1170V18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II+ architecture. The DDR-II+ consists of an SRAM core with an advanced synchronous peripheral circuitry. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of K and K. Each address location is associated with two 8-bit words (CY7C1166V18), or 9-bit words (CY7C1177V18), or 18-bit words (CY7C1168V18), or 36-bit words (CY7C1170V18) that burst sequentially into or out of the device. Asynchronous inputs include output impedance matching input (ZQ). Synchronous data outputs (Q, sharing the same physical pins as the data inputs D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR SRAM in the system design. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. 18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) 300 MHz to 400 MHz clock for high bandwidth 2-Word burst for reducing address bus ...