AUTOMOTIVE MOSFET
PD - 94769
AUTOMOTIVE MOSFET
Features
O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Ra...
Description
PD - 94769
AUTOMOTIVE MOSFET
Features
O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
IRFZ46Z IRFZ46ZS IRFZ46ZL
VDSS = 55V
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
RDS(on) = 13.6mΩ
S
ID = 51A
TO-220AB IRFZ46Z
D2Pak IRFZ46ZS Max.
51 36 200 82 0.54 ± 20 63 97 See Fig.12a,12b,15,16 -55 to + 175
TO-262 IRFZ46ZL Units
A
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Pulsed Drain Current
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current
W W/°C V mJ A mJ °C
c
i
d
Repetitive Avalanche Energy Operating Junction and Storage Temperature Range
h
Soldering Temperature, for 10...
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