WFU2N60

Wisdom Semiconductor WFD/U2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain ● 1. Gate { ▲ ● ● { 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D-PAK, I-PAK 2 1 3 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 600 1.8 1.1 6.0 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 120 4.4 4.5 44 0.35 - 55 ~ 150 300 www.DataSheet4U.comE AS EAR dv/dt PD TSTG, TJ TL Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Therma...