Wisdom Semiconductor
WFD/U2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
1. Gate {
▲
● ●
{
3. Source
General Description
This Power MOSFET is produced using Wisdom’s a...
