MA2SD25

Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) (0.60) 0.01±0.01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 −55 to +125 Unit V 5° 2 0.30±0.05 0+0 –0.05 0.01±0.01 mA mA A °C °C 1 : Anode 2 : Cathode EIAJ : SC-79 SSMini2-F1 Package Marking Symbol: 6L Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) www.DataSheet4U.com Terminal capacitance Reverse recovery time * Symbol IR VF Ct trr VR = 6 V IF = 200 mA VR = 1 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 3 Conditions Min Typ Max 50 0.39 Unit µA V pF ns Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF Output Pulse trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8...