2SK3402

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor designed for high current switching applications. ★ ORDERING INFORMATION PART NUMBER 2SK3402 2SK3402-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES Low On-State Resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 18 A) Low Ciss : Ciss = 3200 pF TYP. Built-in Gate Protection Diode TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±36 ±144 40 1.0 150 –55 to +150 35 123 V V A A W W °C °C A mJ (TO-252) Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) www.DataSheet4U.com Channel Temperature Note2 Note2 Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14473EJ3V1DS00 (3rd edition) Date Published October 200...