FW26025A1

® FW26025A1 PNP POWER DARLINGTON TRANSISTOR s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 8 KΩ R2 Typ. = 60 Ω www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C o Value 100 100 5 20 40 0.5 160 -65 to 200 200 Unit V V V A A A W o o Storage Temperature Max. Operating Junction Temperature C C November 2003 1/4 FW26025A1 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.09 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 50 V V EB = 5 V I C = 2 mA I C = 100 mA I C = 10 A I C = 20 A I C = 20 A I C = 10 A IC = 2 A I C = 10 A I C = 30 A IC = 3 A IE = 0 I B = 40 mA I B = 200 mA I B = 200 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 3 V V CE = 10 V V CB = 10 V f = 1...