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TC2591 Dataheets PDF



Part Number TC2591
Manufacturers Transcom
Logo Transcom
Description 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Datasheet TC2591 DatasheetTC2591 Datasheet (PDF)

TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEME.

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TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT • DESCRIPTION The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications. www.DataSheet4U.com ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 240 mA Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 240 mA, *PSCL = 17 dBm Power Added Efficiency at 1dB Compression Power, f = 6GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA Drain-Gate Breakdown Voltage at IDGO =1.2 mA Thermal Resistance 15 MIN 29.5 11 TYP MAX UNIT 30 12 40 43 600 400 -1.7** 18 18 dBm dB dBm % mA mS Volts Volts °C/W Note: * PSCL: Output Power of Single Carrier Level. ** For the tight control of the pinch-off voltage range, we divide TC2591 into 3 model numbers to fit customer design requirement (1)TC2591P1519 : Vp = -1.5V to -1.9V (2)TC2591P1620 : Vp = -1.6V to -2.0V (3)TC2591P1721 : Vp = -1.7V to -2.1V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2591 REV4_20070507 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 28 dBm 3.8 W 175 °C - 65 °C to +175 °C RECOMMANDED OPERATING CONDITION Symbol VDS ID Parameter Drain to Source Voltage Drain Current Rating 8V 240 mA HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 8 V, IDS = 240 mA FREQUENCY (GHz) 2 3 4 5 6 7 8 9 S11 MAG 0.911.


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