Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03EDE, NP80N03KDE NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE-E1-AY NP80N03KDE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N03CDE-S12-AZ NP80N03DDE-S12-AY NP80N03MDE-S18-AY NP80N03NDE-S18-AY
Sn-Ag-Cu Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
(TO-220)
FEATURES
• Channel Temperature 175 degree rated
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• Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
• Low input capacitance Ciss = 2600 pF TYP.
(TO-263)
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Document No. D15310EJ3V0DS00 (3rd edition) Date Published October 2007 NS Printed in Japan
2001, 2007
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:"
NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note2 Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 ±20 ±80 ±320 120 1.8 175 −55 to +175 50/40/9 2.5/160/400
V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W
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2
Data Sheet D15310EJ3V0DS
NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Ciss Coss Crss td(on) tr td(off) tf QG1 QG2 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge QGS QGD VF(S-D) trr Qrr ID = 80 A, VDD = 24 V, VGS = 10 V VDD = 24 V, VGS = 5 V, ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V, di/dt = 100 A/μs TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A VGS = 4.5 V, ID = 40 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 15 V, ID = 40 A, VGS = 10 V, RG = 1 Ω 1.5 20 2.0 41 5.3 6.8 7.5 2600 590 270 20 12 60 14 48 28 10 14 1.0 34 22 7.0 9.0 11 3900 890 490 44 31 120 35 72 42 MIN. TYP. MAX. 10 ±100 2.5 UNIT
μA
nA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
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D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 τ τ = 1 μs Duty Cycle ≤ 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50 Ω
RL VDD
Data Sheet D15310EJ3V0DS
3
NP80N03EDE, NP80N03KDE, NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140
dT - Percentage of Rated Power - %
Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
100 80 60 40 20 0
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
0
25
50
75
100 125 150 175 200
TC - Case Temperature - °C
TC - Case Temperature - °C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 450
EAS - Single Avalanche Energy - mJ
Figure3. FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse)
PW
ID - Dr.