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UGF18CCT Dataheets PDF



Part Number UGF18CCT
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Dual Common-Cathode Ultrafast Plastic Rectifier
Datasheet UGF18CCT DatasheetUGF18CCT Datasheet (PDF)

UG(F,B)18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 3 2 UG18xCT Series PIN 1 PIN 3 PIN 2 CASE 3 1 UGF18xCT Series PIN 1 PIN 3 PIN 2 2 • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO.

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UG(F,B)18ACT thru UG(F,B)18DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier TO-220AB ITO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 3 2 UG18xCT Series PIN 1 PIN 3 PIN 2 CASE 3 1 UGF18xCT Series PIN 1 PIN 3 PIN 2 2 • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 TO-263AB K 2 1 UGB18xCT Series PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr 18 A 50 V to 200 V 175 A 20 ns 0.95 V 150 °C www.DataSheet4U.comVF TJ max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 105 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG VAC UG18ACT 50 35 50 UG18BCT 100 70 100 18 175 - 65 to + 150 1500 UG18CCT 150 105 150 UG18DCT 200 140 200 UNIT V V V A A °C V Document Number: 88759 Revision: 09-Nov-07 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 UG(F,B)18ACT thru UG(F,B)18DCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode Maximum reverse recovery time per diode Maximum stored charge per diode Typical junction capacitance per diode Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle 9.0 A 20 A 5.0 A TEST CONDITIONS SYMBOL UG18ACT VF TJ = 100 °C TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 9.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM IF = 9.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM at 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C IR UG18BCT UG18CCT UG18DCT UNIT V 1.1 1.2 0.95 10 300 20 30 50 20 45 30 µA trr ns trr ns Qrr nC CJ pF THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case per diode SYMBOL RθJC UG18 4.0 UGF18 6.0 UGB18 4.0 UNIT °C/W www.DataSheet4U.com ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-220AB ITO-220AB TO-263AB TO-263AB Note: (1) Automotive grade AEC Q101 qualified PREFERRED P/N UG18DCT-E3/45 UGF18DCT-E3/45 UGB18DCT-E3/45 UGB18DCT-E3/81 UG18DCTHE3/45 (1) UGF18DCTHE3/45 (1) UGB18DCTHE3/45 (1) UGB18DCTHE3/81 (1) UNIT WEIGHT (g) 1.85 2.00 1.35 1.35 1.85 2.00 1.35 1.35 PACKAGE CODE 45 45 45 81 45 45 45 81 BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape and reel Tube Tube Tube Tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88759 Revision: 09-Nov-07 UG(F,B)18ACT thru UG(F,B)18DCT Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 Resistive or Inductive Load 20 1000 Instantaneous Reverse Leakage Current (µA) Average Forward Current (A) TJ = 125 °C 100 TJ = 100 °C 16 10 12 1 TJ = 25 °C 0.1 8 4 0 0 25 50 75 100 125 150 175 0.01 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics Per Diode Stored Charge/Reverse Recovery Time (nC/ns) 1000 60 IF = 9.0 A VR = 30 V dI/dt = 40 150 A/µs 100 A/µs 20 A/µs 50 A/µs 100 A/µs 50 A/µs 150 A/µs Peak Forward Surge Current (A) TC = 105 °C 8.3 ms Single Half Sine-Wave 50 100 30 20 20 A/µs 10 trr Qrr 0 25 50 75 100 125 150 175 10 0 www.DataSheet4U.com 1 10 100 Number of Cycles at 60 Hz Junction Temperature (°C) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Reverse Switching Characte.


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