UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Plastic Rectifier
TO-220AB ITO-220AB
FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop
3
2 UG18xCT Series
PIN 1 PIN 3 PIN 2 CASE
3 1 UGF18xCT Series
PIN 1 PIN 3 PIN 2
2
• High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
1
TO-263AB K
2 1 UGB18xCT Series
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM trr 18 A 50 V to 200 V 175 A 20 ns 0.95 V 150 °C
www.DataSheet4U.comVF TJ max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 105 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG VAC UG18ACT 50 35 50 UG18BCT 100 70 100 18 175 - 65 to + 150 1500 UG18CCT 150 105 150 UG18DCT 200 140 200 UNIT V V V A A °C V
Document Number: 88759 Revision: 09-Nov-07
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
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UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum DC reverse current at rated DC blocking voltage per diode Maximum reverse recovery time per diode Maximum reverse recovery time per diode Maximum stored charge per diode Typical junction capacitance per diode Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle 9.0 A 20 A 5.0 A TEST CONDITIONS SYMBOL UG18ACT VF TJ = 100 °C TA = 25 °C TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A IF = 9.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM IF = 9.0 A, VR = 30 V, dI/dt = 50 A/µs, Irr = 10 % IRM at 4.0 V, 1 MHz TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C IR UG18BCT UG18CCT UG18DCT UNIT V 1.1 1.2 0.95 10 300 20 30 50 20 45 30
µA
trr
ns
trr
ns
Qrr
nC
CJ
pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance from junction to case per diode SYMBOL RθJC UG18 4.0 UGF18 6.0 UGB18 4.0 UNIT °C/W
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ORDERING INFORMATION (Example)
PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-220AB ITO-220AB TO-263AB TO-263AB Note: (1) Automotive grade AEC Q101 qualified PREFERRED P/N UG18DCT-E3/45 UGF18DCT-E3/45 UGB18DCT-E3/45 UGB18DCT-E3/81 UG18DCTHE3/45 (1) UGF18DCTHE3/45 (1) UGB18DCTHE3/45 (1) UGB18DCTHE3/81 (1) UNIT WEIGHT (g) 1.85 2.00 1.35 1.35 1.85 2.00 1.35 1.35 PACKAGE CODE 45 45 45 81 45 45 45 81 BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape and reel Tube Tube Tube Tape and reel
www.vishay.com 2
For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected]
Document Number: 88759 Revision: 09-Nov-07
UG(F,B)18ACT thru UG(F,B)18DCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24 Resistive or Inductive Load 20 1000
Instantaneous Reverse Leakage Current (µA)
Average Forward Current (A)
TJ = 125 °C 100 TJ = 100 °C
16
10
12
1 TJ = 25 °C 0.1
8
4
0 0 25 50 75 100 125 150 175
0.01 0 20 40 60 80 100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Stored Charge/Reverse Recovery Time (nC/ns)
1000
60 IF = 9.0 A VR = 30 V dI/dt = 40 150 A/µs 100 A/µs 20 A/µs 50 A/µs 100 A/µs 50 A/µs 150 A/µs
Peak Forward Surge Current (A)
TC = 105 °C 8.3 ms Single Half Sine-Wave
50
100
30
20 20 A/µs 10 trr Qrr 0 25 50 75 100 125 150 175
10
0
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10
100
Number of Cycles at 60 Hz
Junction Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode
Figure 5. Reverse Switching Characte.