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SPN4920A Dataheets PDF



Part Number SPN4920A
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-Channel MOSFET
Datasheet SPN4920A DatasheetSPN4920A Datasheet (PDF)

SPN4920A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V ‹ .

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SPN4920A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V ‹ 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP – 8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOP – 8P) www.DataSheet4U.com PART MARKING 2007/ 09 / 30 Ver.1 Page 1 SPN4920A N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPN4920AS8RG SPN4920AS8TG ※ SPN4920AS8RG : 13” Tape Reel ; Pb – Free ※ SPN4920AS8TG : Tube ; Pb – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter www.DataSheet4U.com Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Package SOP- 8P SOP- 8P Part Marking SPN4920A SPN4920A Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical 30 ±20 Unit Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient V V A A A W ℃ ℃ ℃/W 6.8 5.8 35 1.7 2.8 1.8 -55/150 -55/150 65 2007/ 09 / 30 Ver.1 Page 2 SPN4920A N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time www.DataSheet4U.com Symbol Conditions Min. Typ Max. Unit V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDD=20V,RL=20Ω ID≡1.0A,VGEN=10V RG=6Ω VDS=0V,VGS=±20V VDS=30V,VGS=0V VDS=30V,VGS=0V TJ=85℃ VDS≥5V,VGS =10V VGS= 10V,ID=6.8A VGS=4.5V,ID=5.8A VDS=15V,ID=6.2A IS=2.0A,VGS =0V 30 1.0 3.0 ±100 1 5 20 0.026 0.036 13 0.8 10 1.8 2.3 8 12 15 10 15 25 35 20 0.035 0.045 1.2 15 V nA uA A Ω S V VDS=20V,VGS=10V ID= 7.2A nC nS Turn-Off Time 2007/ 09 / 30 Ver.1 Page 3 SPN4920A N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2007/ 09 / 30 Ver.1 Page 4 SPN4920A N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2007/ 09 / 30 Ver.1 Page 5 SPN4920A N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2007/ 09 / 30 Ver.1 Page 6 SPN4920A N-Channel Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE www.DataSheet4U.com 2007/ 09 / 30 Ver.1 Page 7 SPN4920A N-Channel Enhancement Mode MOSFET www.DataSheet4U.com Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2007/ 09 / 30 Ver.1 Page 8 .


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