SPN9926

SPN9926 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V  20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter PIN CONFIGURATION(SOP–8) PART MARKING 2020/03/05 Ver.2 Page 1 SPN9926 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 ORDERING INFORMATION Part Number Package SPN9926S8RGB SOP-8 SPN9926S8TGB SOP-8 ※ SPN9926S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ※ SPN9926S8TGB : Tube ; Pb – Free ; Halogen – Free Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Part Marking SPN9926 SPN9926 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Cu...