FGA70N30TD

FGA70N30TD 300V, 70A PDP Trench IGBT December 2007 FGA70N30TD 300V, 70A PDP IGBT Features High current capability Low saturation voltage: VCE(sat) =1.5V @ IC = 40A High input impedance Fast switching RoHS complaint tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Application . PDP System C G TO-3P G C E E Absolute Maximum Ratings Symbol VCES VGES Gate-Emitter Voltage @ TC = 25oC @ TC = 100°C @ TC = 25oC @ TC = 100oC Description Collector-Emitter Voltage Ratings 300 ±30 160 10 40 201 90.6 -55 to +150 -55 to +150 300 Units V V A A A W W o o o Pulsed Collector Current IC pulse(1)* www.DataSheet4U.com Diode Continuous Forward Current IF IFM PD TJ Tstg TL Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.2 * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction-to-Case Typ. ---- Max. 0.62 1.56 40 Units o o o C/W C/W C/W RθJC(DIODE) Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA70N30TD Rev. A FGA70N30T...