70A PDP IGBT
FGA70N30T 300V, 70A PDP Trench IGBT
December 2007
FGA70N30T 300V, 70A PDP IGBT
Features
• High current capability • Lo...
Description
FGA70N30T 300V, 70A PDP Trench IGBT
December 2007
FGA70N30T 300V, 70A PDP IGBT
Features
High current capability Low saturation voltage: VCE(sat) =1.5V @ IC = 40A High input impedance Fast switching RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Application
. PDP System
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
VCES VGES Gate-Emitter Voltage @ TC = 25oC @ TC = 25oC @ TC = 100 C
o
Description
Collector-Emitter Voltage
Ratings
300 ±30 160 201 90.6 -55 to +150 -55 to +150 300
Units
V V A W W
oC o o
Pulsed Collector Current IC pulse(1)* www.DataSheet4U.com Maximum Power Dissipation PD Maximum Power Dissipation TJ Tstg TL Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
C C
Thermal Characteristics
Symbol
RθJC(IGBT) RθJA
Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.2 * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
---
Max.
0.62 40
Units
o o
C/W C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA70N30T Rev. A
FGA70N30T 300V, 70A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA70N30T
Device
FGA70N30TTU
Package
TO-3P
= 25oC unless otherwise noted
Packagi...
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