Document
FFH30US30DN
June 2003
FFH30US30DN
30A, 300V Stealth™ Diode
General Description
The FFH30US30DN is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC)), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower VF and IRM(REC) reduces diode losses. Formerly developmental type TA49449.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 0.45 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 50ns • High Operating Temperature . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V • Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ
Applications
• Switch Mode Power Supplies • Power Factor Correction • Uninterruptable Power Supplies • Motor Drives
• Welders
Package
JEDEC STYLE 3 LEAD TO-247
ANODE 2 CATHODE ANODE 1
Symbol
K
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CATHODE (BOTTOM SIDE METAL)
A1
A2
Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 160oC) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 300 300 300 30 60 70 325 230 20 -55 to 175 300 260 Units V V V A A A A W mJ °C °C °C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1
FFH30US30DN
Package Marking and Ordering Information
Device Marking 30US30DN Device FFH30US30DN Package TO-247 Tape Width N/A Quantity 30
Electrical Characteristics (per leg) TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
IR Instantaneous Reverse Current VR = 300V TC = 25°C TC = 125°C 100 1 µA mA
On State Characteristics
VF Instantaneous Forward Voltage IF = 30A TC = 25°C TC = 125°C 0.93 0.8 1.0 0.87 V V
Dynamic Characteristics
CJ Junction Capacitance VR = 10V, IF = 0A 410 pF
Switching Characteristics
trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/µs, VR = 15V IF = 30A, dIF/dt = 100A/µs, VR = 15V IF = 30A, dIF/dt = 200A/µs, VR = 195V, TC = 25°C IF = 30A, dIF/dt = 200A/µs, VR =195V, TC = 125°C IF = 30A, dIF/dt = 1000A/µs, VR =195V, TC = 125°C 29 32 46 5.3 140 77 0.45 9 400 54 0.49 32 930 50 55 ns ns ns A nC ns A nC ns A nC
www.DataSheet4U.com Rθ JC Rθ JA
Thermal Characteristics
Thermal Resistance Junction to Case TO-247 0.65 30 °C/W °C/W Thermal Resistance Junction to Ambient TO-247
©2003 Fairchild Semiconductor Corporation
FFH30US30DN Rev. A1
FFH30US30DN
Typical Performance Curves (per leg)
60 1000 175oC IF, FORWARD CURRENT (A) 175oC 125oC IR, REVERSE CURRENT (µA) 50 100 150oC 125oC 10 100oC 75oC
40
30
75oC
1
20 25oC 10
0.1 25oC
0 0.3
0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 50 100 150 200 250 300 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
60 VR = 195V, TC = 125oC
Figure 2. Reverse Current vs Reverse Voltage
70 VR = 195V, TC = 125oC 60 t, RECOVERY TIMES (ns) tb at IF = 60A, 30A, 15A 50 40 30 ta at IF = 60A, 30A, 15A 20 10
50 t, RECOVERY TIMES (ns)
40 tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs
30
20
10 ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 0 10 20 30 40 50 60
0 0 200 400 600 800 1000 1200 IF , FORWARD CURRENT (A)
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
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IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 35 30 25
Figure 3. ta and tb Curves vs Forward Current
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) VR = 195V, TC = 125oC 40 35 30 25
Figure 4. ta and tb Curves vs dIF /dt
VR = 195V, TC = 125oC
dIF/dt = 800A/µs 20 15 10 5 0 0 10 20 30 40 50 60 dIF/dt = 200A/µs dIF/dt = 500A/µs
IF = 60A 20 IF = 30A 15 IF = 15A 10 5 200 400 600 800 1000 1200
IF , FORWARD CURRENT (A)
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Curr.