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FFH30US30DN Dataheets PDF



Part Number FFH30US30DN
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 300V Stealth Diode
Datasheet FFH30US30DN DatasheetFFH30US30DN Datasheet (PDF)

FFH30US30DN June 2003 FFH30US30DN 30A, 300V Stealth™ Diode General Description The FFH30US30DN is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC)), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower VF and IRM(REC) reduces diode losses. Formerly developm.

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FFH30US30DN June 2003 FFH30US30DN 30A, 300V Stealth™ Diode General Description The FFH30US30DN is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC)), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower VF and IRM(REC) reduces diode losses. Formerly developmental type TA49449. Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 0.45 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 50ns • High Operating Temperature . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V • Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ Applications • Switch Mode Power Supplies • Power Factor Correction • Uninterruptable Power Supplies • Motor Drives • Welders Package JEDEC STYLE 3 LEAD TO-247 ANODE 2 CATHODE ANODE 1 Symbol K www.DataSheet4U.com CATHODE (BOTTOM SIDE METAL) A1 A2 Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 160oC) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 300 300 300 30 60 70 325 230 20 -55 to 175 300 260 Units V V V A A A A W mJ °C °C °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1 FFH30US30DN Package Marking and Ordering Information Device Marking 30US30DN Device FFH30US30DN Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics (per leg) TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 300V TC = 25°C TC = 125°C 100 1 µA mA On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25°C TC = 125°C 0.93 0.8 1.0 0.87 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 410 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/µs, VR = 15V IF = 30A, dIF/dt = 100A/µs, VR = 15V IF = 30A, dIF/dt = 200A/µs, VR = 195V, TC = 25°C IF = 30A, dIF/dt = 200A/µs, VR =195V, TC = 125°C IF = 30A, dIF/dt = 1000A/µs, VR =195V, TC = 125°C 29 32 46 5.3 140 77 0.45 9 400 54 0.49 32 930 50 55 ns ns ns A nC ns A nC ns A nC www.DataSheet4U.com Rθ JC Rθ JA Thermal Characteristics Thermal Resistance Junction to Case TO-247 0.65 30 °C/W °C/W Thermal Resistance Junction to Ambient TO-247 ©2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1 FFH30US30DN Typical Performance Curves (per leg) 60 1000 175oC IF, FORWARD CURRENT (A) 175oC 125oC IR, REVERSE CURRENT (µA) 50 100 150oC 125oC 10 100oC 75oC 40 30 75oC 1 20 25oC 10 0.1 25oC 0 0.3 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 50 100 150 200 250 300 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 60 VR = 195V, TC = 125oC Figure 2. Reverse Current vs Reverse Voltage 70 VR = 195V, TC = 125oC 60 t, RECOVERY TIMES (ns) tb at IF = 60A, 30A, 15A 50 40 30 ta at IF = 60A, 30A, 15A 20 10 50 t, RECOVERY TIMES (ns) 40 tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs 30 20 10 ta at dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 0 10 20 30 40 50 60 0 0 200 400 600 800 1000 1200 IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs) www.DataSheet4U.com IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) 35 30 25 Figure 3. ta and tb Curves vs Forward Current IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) VR = 195V, TC = 125oC 40 35 30 25 Figure 4. ta and tb Curves vs dIF /dt VR = 195V, TC = 125oC dIF/dt = 800A/µs 20 15 10 5 0 0 10 20 30 40 50 60 dIF/dt = 200A/µs dIF/dt = 500A/µs IF = 60A 20 IF = 30A 15 IF = 15A 10 5 200 400 600 800 1000 1200 IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Maximum Reverse Recovery Curr.


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