FDMS7692

FDMS7692 N-Channel PowerTrench® MOSFET January 2015 FDMS7692 N-Channel PowerTrench® MOSFET 30 V, 7.5 mΩ Features „ Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 10 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switch „ DC-DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VDSt VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Drain to Source Transient Voltage ( tTransient < 100 ns) Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Character...