FDMS7672

FDMS7672 N-Channel PowerTrench® MOSFET FDMS7672 N-Channel PowerTrench® MOSFET 30 V, 5.0 mΩ Features „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A „ Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A „ Advanced Package and Silicon design for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant October 2014 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications „ IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switch „ DC-DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S D D D D Power 56 D7 D8 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperatur...