FDMS7650

FDMS7650 N-Channel PowerTrench® MOSFET February 2016 FDMS7650 N-Channel PowerTrench® MOSFET 30 V, 267 A, 0.99 mΩ Features General Description „ Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A „ Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A „ Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). „ MSL1 Robust Package Design „ 100% UIL Tested „ RoHS Compliant Applications „ OringFET „ Synchronous Rectifier D D D D D5 4G G S S S Pin 1 Top Bottom Power 56 D6 D7 D8 3S 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25 °C TC = 100 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 5) (Note 5) (Note 1a) (Note 6) (Note 3) (Note 1a) Ratings 30 ±20 267 169 36 1210 544 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.2 ...