N-Channel MOSFET
FDMC8200 Dual N-Channel PowerTrench® MOSFET
June 2009
FDMC8200
Dual N-Channel PowerTrench® MOSFET
30 V, 9.5 mΩ and 20 ...
Description
FDMC8200 Dual N-Channel PowerTrench® MOSFET
June 2009
FDMC8200
Dual N-Channel PowerTrench® MOSFET
30 V, 9.5 mΩ and 20 mΩ Features
Q1: N-Channel Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7 A RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. designed to provide optimal power efficiency. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been
Applications
Mobile Computing Mobile Internet Devices General Purpose Point of Load
Pin 1
G1
D1
D1
D1
G HS V IN V IN
V IN
S2
DE NO
5 6 7 8
Q2
4 D1 3 D1 2 D1
Q1
D1 D2/S1 S2
V IN
H ITC SW
S2
ND DG GN
S2 G2
G2 BOTTOM
S2
S2
G LS
D GN
1 G1
BOTTOM
Power 33
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MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package limited) ID - Continuous (Silicon limited) - Continuous - Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TA = 25 °C TA = 25 °C (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C Q1 30 ±20 18 23 8 1a 40 1.9 1a 0.7 1c Q2 30 ±20 18 45 12 1b 40 2.2 1b 0.9 1d W °C A Units V V
-55 t...
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