FDMC8200

FDMC8200 Dual N-Channel PowerTrench® MOSFET June 2009 FDMC8200 Dual N-Channel PowerTrench® MOSFET 30 V, 9.5 mΩ and 20 mΩ Features Q1: N-Channel „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel „ Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7 A „ RoHS Compliant General Description This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. designed to provide optimal power efficiency. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been Applications „ Mobile Computing „ Mobile Internet Devices „ General Purpose Point of Load Pin 1 G1 D1 D1 D1 G HS V IN V IN V IN S2 DE NO 5 6 7 8 Q2 4 D1 3 D1 2 D1 Q1 D1 D2/S1 S2 V IN H ITC SW S2 ND DG GN S2 G2 G2 BOTTOM S2 S2 G LS D GN 1 G1 BOTTOM Power 33 www.DataSheet4U.com MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package limited) ID - Continuous (Silicon limited) - Continuous - Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TA = 25 °C TA = 25 °C (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C Q1 30 ±20 18 23 8 1a 40 1.9 1a 0.7 1c Q2 30 ±20 18 45 12 1b 40 2.2 1b 0.9 1d W °C A Units V V -55 t...