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FDMC6675BZ P-Channel PowerTrench® MOSFET
FDMC6675BZ
P-Channel Power Trench® MOSFET
-30 V, -20 A, 14.4 mΩ
Features
Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A HBM ESD protection level of 8 kV typical(note 3) Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS Compliant
June 2009
General Description
The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
Application
Load Switch in Notebook and Server Notebook Battery Pack Power Management
Top Pin 1 S S S G
Bottom D D D D D D D D 8 1 5 6 7 4 3 2 G S S S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com Symbol VDS
VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings -30 ±25 -20 -40 -9.5 -32 36 2.3 -55 to +150 W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.4 53 °C/W
Package Marking and Ordering Information
Device Marking FDMC6675BZ Device FDMC6675BZ Package MLP 3.3X3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units
©2009 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D1
1
www.fairchildsemi.com
FDMC6675BZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 µA, VGS = 0 V ID = -250 µA, referenced to 25 °C VDS = -24 V, VGS = 0 V -30 20 -1 TJ = 125 °C -100 ±10 V mV/°C µA µA
VGS = ±25 V, VDS = 0 V
On Characteristics
VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250 µA ID = -250 µA, referenced to 25 °C VGS = -10 V, ID = -9.5 A VGS = -4.5 V, ID = -6.9 A VGS = -10 V, ID = -9.5 A, TJ = 125 °C VDD = -5 V, ID = -9.5 A -1.0 -1.9 -6 10.7 17.4 15.2 28 14.4 27.0 20.5 S mΩ -3.0 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1 MHz 2154 392 349 2865 525 525 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VGS = 0 V to -10 V VGS = 0 V to -5 V VDD = -15 V, ID = -9.5 A VDD = -15 V, ID = -9.5 A, VGS = -10 V, RGEN = 6 Ω 11 10 44 26 46 26 6.4 13 20 20 71 42 65 37 ns ns ns ns nC nC nC nC
www.DataSheet4U.com Drain-Source
VSD trr Qrr
Diode Characteristics
VGS = 0 V, IS = -9.5 A VGS = 0 V, IS = -1.6 A IF = -9.5 A, di/dt = 100 A/µs (Note 2) (Note 2) 0.89 0.73 24 15 1.3 1.2 38 27 V V ns nC
Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. 3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation FDMC6675BZ Rev.D1
2
www.fairchildsemi.com
FDMC6675BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
32
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
5.0
VGS = -4 V
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 8
VGS = -3.5 V
-ID, DRAIN CURRENT (A)
VGS = -4.5 V
PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX
24
VGS = -6 V VGS = -10 V
VGS = -4 V
16
VGS = -3.5 V
VGS = -4.5 V VGS = -6 V VGS = -10 V
8
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
16
24
32
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
50
SOURCE ON-RESISTANCE (mΩ)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -75
ID = -9.5 A VGS = -10 V
PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX
40
ID = -9.5 A
rDS(on), DRAIN TO
30.