N-Channel MOSFET
FDD6782A N-Channel Power Trench® MOSFET
January 2009
FDD6782A
N-Channel PowerTrench® MOSFET
25 V, 10.5 mΩ Features
M...
Description
FDD6782A N-Channel Power Trench® MOSFET
January 2009
FDD6782A
N-Channel PowerTrench® MOSFET
25 V, 10.5 mΩ Features
Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A 100% UIL test RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
D
D G S
G
D-PAK TO -252 (TO-252)
S
www.DataSheet4U.com Symbol VDS
VGS
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 20 42 20 100 12 31 3.7 -55 to +175 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 4.8 40 °C/W
Package Marking and Ordering Information
Device Marking FDD6782A Device FDD6782A Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units
©20...
Similar Datasheet