FDD6780A

FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET 25 V, 8.6 mΩ Features „ Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A „ Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A „ 100% UIL test „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol www.DataSheet4U.com VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 25 ±20 30 48 16.4 100 24 32.6 3.7 -55 to +175 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case TO-252, TO-251 Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 4.6 40 °C/W Package Marking and Ordering Information Device Marking FDD6780A FDU6780A Device ...