FDD6760A N-Channel Power Trench® MOSFET
January 2009
FDD6760A
N-Channel PowerTrench® MOSFET
25 V, 3.2 mΩ Features
Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 21 A 100% UIL test RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/...
