N-Channel MOSFET
FDB3860 N-Channel PowerTrench® MOSFET
March 2009
FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
M...
Description
FDB3860 N-Channel PowerTrench® MOSFET
March 2009
FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A High performance trench technology for extremely low rDS(on) 100% UIL tested RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion Synchronous Rectifier
D
D
G S TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheet4U.com Symbol VDS
VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 100 ±20 30 6.4 60 96 71 3.1 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.75 40 °C/W
Package Marking and Ordering Information
Device Marking FDB3860 Device FDB3860 Package TO-263AB Reel Size 330 mm Tape Width 24 mm Quantity 800 units
©2009 Fairchild Semiconductor Corporation FDB3860 Rev.C
1
www.fairchildsemi.com
FDB3860 N-Channel Pow...
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