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FDB088N08 Dataheets PDF



Part Number FDB088N08
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDB088N08 DatasheetFDB088N08 Datasheet (PDF)

FDB088N08 — N-Channel PowerTrench® MOSFET FDB088N08 N-Channel PowerTrench® MOSFET 75 V, 85 A, 8.8 mΩ November 2013 Features • RDS(on) = 7.3 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • 100% Internal RG Screening for Easy Paralleling Operation • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTren.

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FDB088N08 — N-Channel PowerTrench® MOSFET FDB088N08 N-Channel PowerTrench® MOSFET 75 V, 85 A, 8.8 mΩ November 2013 Features • RDS(on) = 7.3 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • 100% Internal RG Screening for Easy Paralleling Operation • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous Continuous Continuous (TC (TC (TC = = = 25oC, 100oC, 25oC, Silicon Limited) Silicon Limited) Package Limited) IDM EAS dv/dt PD Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Pulsed (TC = 25oC) - Derate above 25oC (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDB088N08 75 ±20 85 60 120 340 309 10 160 1.06 -55 to +175 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max. FDB088N08 0.94 62.5 40 Unit V V A A A A mJ V/ns W W/oC oC oC Unit oC/W ©2009 Fairchild Semiconductor Corporation 1 FDB088N08 Rev. C2 www.fairchildsemi.com FDB088N08 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Part Number FDB088N08 Top Mark FDB088N08 Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TC = 25oC ID = 250 μA, Referenced to 25oC VDS = 75 V, VGS = 0 V VDS = 75 V, TC = 150oC VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 μA VGS = 10 V, ID = 75 A VDS = 10 V, ID = 37.5 A Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Gate Resistance VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 60 V, ID = 75 A, VGS = 10 V f = 1 MHz (Note 4) S.


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