Document
FDB088N08 — N-Channel PowerTrench® MOSFET
FDB088N08
N-Channel PowerTrench® MOSFET
75 V, 85 A, 8.8 mΩ
November 2013
Features
• RDS(on) = 7.3 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • 100% Internal RG Screening for Easy Paralleling Operation • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D D
G S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-
Continuous Continuous Continuous
(TC (TC (TC
= = =
25oC, 100oC,
25oC,
Silicon Limited) Silicon Limited) Package Limited)
IDM EAS dv/dt
PD
Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed (TC = 25oC) - Derate above 25oC
(Note 1) (Note 2) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDB088N08 75 ±20 85 60 120 340 309 10 160 1.06
-55 to +175 300
Thermal Characteristics
Symbol RθJC
RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (1 in2 Pad of 2-oz Copper), Max.
FDB088N08 0.94 62.5 40
Unit V V A A A A mJ
V/ns W
W/oC oC oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
1
FDB088N08 Rev. C2
www.fairchildsemi.com
FDB088N08 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDB088N08
Top Mark FDB088N08
Package D2-PAK
Packing Method Tape and Reel
Reel Size 330 mm
Tape Width 24 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC ID = 250 μA, Referenced to 25oC
VDS = 75 V, VGS = 0 V VDS = 75 V, TC = 150oC VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th) RDS(on) gFS
Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance
VGS = VDS, ID = 250 μA VGS = 10 V, ID = 75 A VDS = 10 V, ID = 37.5 A
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd RG
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge Gate Resistance
VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 60 V, ID = 75 A, VGS = 10 V f = 1 MHz
(Note 4)
S.