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FDA24N40F Dataheets PDF



Part Number FDA24N40F
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDA24N40F DatasheetFDA24N40F Datasheet (PDF)

FDA24N40F — N-Channel UniFETTM FRFET® MOSFET FDA24N40F N-Channel UniFETTM FRFET® MOSFET 400 V, 23 A, 190 mΩ May 2014 Features • RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A • Low Gate Charge (Typ. 46 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to re.

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FDA24N40F — N-Channel UniFETTM FRFET® MOSFET FDA24N40F N-Channel UniFETTM FRFET® MOSFET 400 V, 23 A, 190 mΩ May 2014 Features • RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A • Low Gate Charge (Typ. 46 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G D S TO-3PN G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. FDA24N40F 400 ±30 23 13.8 92 1190 23 23.5 4.5 235 1.8 -55 to +150 300 FDA24N40F 0.53 40 Unit V V A A mJ A mJ V/ns W W/oC oC oC Unit oC/W ©2008 Fairchild Semiconductor Corporation 1 FDA24N40F Rev. C2 www.fairchildsemi.com FDA24N40F — N-Channel UniFETTM FRFET® MOSFET Package Marking and Ordering Information Part Number FDA24N40F Top Mark FDA24N40F Package Packing Method TO-3PN Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC 400 ID = 250 μA, Referenced to 25oC - VDS = 400 V, VGS = 0 V - VDS = 320 V, TC = 125oC - VGS = ±30 V, VDS = 0 V - On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3.0 RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 11.5 A - gFS Forward Transconductance VDS = 20 V, ID = 11.5 A - Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 320 V, ID = 23 A, VGS = 10 V - - - - - (Note 4) - Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDS = 200 V, ID = 23 A, VGS = 10 V, RG = 25 Ω - - - (Note 4) - Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - ISM Maximum Pulsed Drain to Source Diode Forward Current - VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 23 A - trr Reverse Recovery Time VGS = 0 V, ISD = 23 A, - Qrr Reverse Recovery Charge dIF/dt = 100 A/μs - Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 4.5 mH, IAS = 23 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3: ISD ≤ 23 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. Typ. 0.5 - 0.15 29 2280 370 25 46 13 18 40 92 120 75 110 0.3 Max. Unit - - 10 100 ±100 V V/oC μA nA 5.0 V 0.19 Ω - S 3030 pF 490 pF 38 pF 60 nC - nC - nC 90 ns 195 ns 250 ns 160 ns 23 A 92 A 1.5 V - ns - μC ©2008 Fairchild Semiconductor Corporation 2 FDA24N40F Rev. C2 www.fairchildsemi.com FDA24N40F — N-Channel UniFETTM FRFET® MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 70 VGS = 15.0V 10.0V 8.0 V 7.0 V 10 6.5 V 6.0 V 5.5 V ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance 1 0.1 0.02 *Notes: 1. 250μs Pulse Test 2. TC = 25oC 0.1 1 VDS,Drain-Source Voltage[V] 10 15 Figure 3. On-Resistance Variation vs. Drain Cur.


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