Document
FDA24N40F — N-Channel UniFETTM FRFET® MOSFET
FDA24N40F
N-Channel UniFETTM FRFET® MOSFET
400 V, 23 A, 190 mΩ
May 2014
Features
• RDS(on) = 150 mΩ (Typ.) @ VGS = 10 V, ID = 11.5 A • Low Gate Charge (Typ. 46 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested • RoHS Compliant
Applications
• Uninterruptible Power Supply • AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G D S
TO-3PN
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
FDA24N40F 400 ±30 23 13.8 92 1190 23 23.5 4.5 235 1.8
-55 to +150 300
FDA24N40F 0.53 40
Unit V V
A
A mJ A mJ V/ns W W/oC oC oC
Unit
oC/W
©2008 Fairchild Semiconductor Corporation
1
FDA24N40F Rev. C2
www.fairchildsemi.com
FDA24N40F — N-Channel UniFETTM FRFET® MOSFET
Package Marking and Ordering Information
Part Number FDA24N40F
Top Mark FDA24N40F
Package Packing Method
TO-3PN
Tube
Reel Size N/A
Tape Width N/A
Quantity 30 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS / ΔTJ
Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
400
ID = 250 μA, Referenced to 25oC
-
VDS = 400 V, VGS = 0 V
-
VDS = 320 V, TC = 125oC
-
VGS = ±30 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
3.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 11.5 A
-
gFS
Forward Transconductance
VDS = 20 V, ID = 11.5 A
-
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = 320 V, ID = 23 A, VGS = 10 V
-
-
-
-
-
(Note 4)
-
Switching Characteristics
td(on) tr td(off) tf
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
VDS = 200 V, ID = 23 A, VGS = 10 V, RG = 25 Ω
-
-
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 23 A
-
trr
Reverse Recovery Time
VGS = 0 V, ISD = 23 A,
-
Qrr
Reverse Recovery Charge
dIF/dt = 100 A/μs
-
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 4.5 mH, IAS = 23 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3: ISD ≤ 23 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics.
Typ.
0.5
-
0.15 29
2280 370 25 46 13 18
40 92 120 75
110 0.3
Max. Unit
-
-
10 100 ±100
V V/oC
μA nA
5.0
V
0.19
Ω
-
S
3030 pF
490 pF
38
pF
60
nC
-
nC
-
nC
90
ns
195
ns
250
ns
160
ns
23
A
92
A
1.5
V
-
ns
-
μC
©2008 Fairchild Semiconductor Corporation
2
FDA24N40F Rev. C2
www.fairchildsemi.com
FDA24N40F — N-Channel UniFETTM FRFET® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
70 VGS = 15.0V
10.0V
8.0 V
7.0 V
10
6.5 V
6.0 V
5.5 V
ID,Drain Current[A]
RDS(ON) [Ω], Drain-Source On-Resistance
1
0.1 0.02
*Notes: 1. 250μs Pulse Test 2. TC = 25oC
0.1
1
VDS,Drain-Source Voltage[V]
10 15
Figure 3. On-Resistance Variation vs. Drain Cur.