FCA35N60

FCA35N60 N-Channel MOSFET March 2009 FCA35N60 600V N-Channel MOSFET Features 650V @ TJ = 150°C Typ.RDS(on) = 0.079Ω Ultra low gate charge ( Typ. Qg = 139nC ) Low effective output capacitance ( Typ. Coss.eff = 340pF ) 100% avalanche tested SuperFETTM Description SuperFETTM is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G TO-3PN G DS S o MOSFET Maximum Ratings TC = 25 C unless otherwise noted* Symbol VDSS www.DataSheet4U.com V GSS Parameter Drain to Source Voltage Gate-Soure voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 600 ±30 35 22.2 105 1455 35 31.25 20 312.5 2.5 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering ...