N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9971GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surfa...
Description
AP9971GM
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface Mount Package
D1 G2 S2 D2 D2 D1
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 50mΩ 5A
D2
SO-8
S1
G1
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1
D1
G2 S1 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃
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Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current
1,2 3
Rating 60 +25 5 3.2 30 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 62.5
Unit ℃/W
Data and specifications subject to change without notice
1 200811042
AP9971GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=2.5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VGS= +25V ID=5A VDS=48V VGS=10V VDS=30V ID=5A RG=3.3Ω,V...
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