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IGW75N60T

Infineon Technologies

IGBT

IGW75N60T TRENCHSTOP™ Series q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(...


Infineon Technologies

IGW75N60T

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IGW75N60T TRENCHSTOP™ Series q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO247-3 Type IGW75N60T VCE 600V IC 75A VCE(sat),Tj=25°C 1.5V Tj,max 175C Marking G75T60 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls VGE tSC Ptot Tj Tstg - Value 600 118 85 225 225 20 5 428 -40...+175 -55...+150 260 Unit V A V s W C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between sh...




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