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IGW03N120H2

Infineon Technologies

IGBT

IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for s...


Infineon Technologies

IGW03N120H2

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Description
IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qualified according to JEDEC2 for target applications PG-TO220-3-1 Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-247-3 Type IGW03N120H2 IGP03N120H2 VCE IC Eoff Tj 1200V 3A 0.15mJ 150°C 1200V 3A 0.15mJ 150°C Marking G03H1202 G03H1202 Package PG-TO-247-3 PG-TO-220-3-1 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°...




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