< SMALL-SIGNAL TRANSISTOR >
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYP...
< SMALL-SIGNAL
TRANSISTOR >
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON
PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING
2SA1602A
2.1 0.425 1.25 0.425 0.5
Unit:mm
2SA1235A
2.5 1.5 0.5
・Excellent linearity of DC forward gain
・Small collector to emitter saturation voltage VCE(sat)=-0.3V max 0.65
0.95
APPLICATION
For Hybrid IC,small type machine low frequency voltageAmplify application 2.0 1.3
0.3
① ② ③
① ② ③
2.9 1.90
0.65
0.9
1.1
0.95
0.15
0.7
0.8
JEITA:SC-70 JEDEC:- TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR
0~0.1
JEITA:SC-59 JEDEC:TO-236 TERMINAL CONNECTER ①:BASE ②:EMITTER ③:COLLECTOR 2SA1993
www.DataSheet4U.com
3.0
0~0.1
4.0
14.0
1.0
1.0
0.1 0.45
1.27 1.27 0.4 2.5 ① ② ③
JEITA:- JEDEC:- TERMINAL CONNECTER ①:EMITTER ②:COLLECTOR ③:BASE
ISAHAYA ELECTRONICS CORPORATION
0.16
0.4
< SMALL-SIGNAL
TRANSISTOR >
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON
PNP EPITAXIAL TYPE(Super mini type)
MAXIMUM RATINGS(Ta=25℃)
Symbol VCBO VEBO VCEO I C PC Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings
2SA1235A -60 -6 -50 200 200 200 +150 -55~+150 450 2SA1602A -60 2SA1993 -50
Unit
V V V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parame ter
V(BR)CEO I CBO I
EBO
Symbol
C to E break down voltage Collector cut of...