1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED
White Electronic Designs
WV3HG264M64EEU-D4
ADVANCED*
1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED
FEATURES
200-pin, dual in-li...
Description
White Electronic Designs
WV3HG264M64EEU-D4
ADVANCED*
1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED
FEATURES
200-pin, dual in-line memory module (SO-DIMM) Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components VCC = 1.8V ±0.1V VCCSPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3, 4, 5 and 6 Adjustable data-output drive strength On-die termination (ODT) Posted CAS# latency: 0, 1, 2, 3 and 4 Serial Presence Detect (SPD) with EEPROM 64ms: 8,192 cycle refresh
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DESCRIPTION
The WV3HG264M64EEU is a 2x64Mx64 Double Data Rate DDR2 SDRAM high density SO-DIMM. This memory module consists of sixteen 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 200-pin SO-DIMM FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. NOTE: Consult factory for availability of: Vendor source control options Industrial temperature option
Dual Rank RoHS compliant JEDEC Package option 200 Pin (SO-DIMM) PCB – 30.00mm (1.181") TYP.
OPERATING FREQUENCIES
PC2-3200 Clock Speed CL-tRCD-tRP
* Consult factory for availability
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